Argon gas pressure dependence of the properties of transparent conducting ZnO:Al films deposited on glass substrates

摘要: Aluminium doped zinc oxide (ZnO:Al) films were deposited on amorphous substrates heated up to 200°C with a radio frequency (rf) power of 100 W by rf magnetron sputtering from ZnO target mixed Al2O3 2 wt.%. Argon gas pressure during deposition was in the range 0.08–2.7 Pa. As argon increased, rate and grain size decreased surface roughness increased. Furthermore, carrier concentration Hall mobility thus electrical resistivity However, optical transmittance about 90% maintained over range. The film at 0.13 Pa 2.5×10−4 Ω cm, value comparable that for indium tin presently used as transparent electrode.