Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes
作者： X.A. Cao , E.B. Stokes , P.M. Sandvik , S.F. LeBoeuf , J. Kretchmer
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摘要: … Several groups have reported the dominance of carrier tunneling in InGaN/GaN-based blue-green light emitting diodes (LEDs) [2]–[4]. Unrealistic ideality factors of 4–6 in these devices …
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