Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric
作者： Sung Kyu Jang , Jiyoun Youn , Young Jae Song , Sungjoo Lee
DOI: 10.1038/SREP30449
关键词:
摘要: Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) mode and high-pressure CVD mode, were compared as function the precursor partial pressure. Conventional self-limited was obtained below critical pressure borazine precursor, whereas thick h-BN layer (thicker than thickness 10 nm) grown beyond An interesting coincidence 10 nm identified in both behavior breakdown electric field strength leakage current mechanism, indicating that electrical properties film depended significantly on resultant quality.
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