Current constricting phase change memory element structure

作者: Simone Raoux , Ming-Hsiang Hsueh , Hsiang-Lan Lung , Chia Hua Ho , Chung Hon Lam

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摘要: A layer of nanoparticles having a dimension on the order of 10 nm is employed to form a current constricting layer or as a hardmask for forming a current constricting layer from an …

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