Output Transistor Leakage Compensation for Ultra Low-Power LDO Regulator
作者： Rainer Krenzke
DOI:
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摘要: Circuits and methods to compensate leakage current of a LDO are disclosed. The compensation is achieved by temperature dependent sink generation, which has nearly zero consumption increase about 50 nA at room starts temperatures above 85 100 degrees Celsius, corresponding range wherein currents come into account.
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