Wafer inspection system and wafer inspection process using charged particle beam

摘要: The present invention provides a wafer inspection technique capable of detecting defect in on which pattern having large step such as contact hole being subjected to semiconductor manufacturing process is formed and obtaining information the position kind with open failure caused dry etching at high speed. A scanned irradiated an electron beam irradiation energy range from 100 eV 1,000 eV, detected speed image secondary electrons generated. Before captured, while moved thereby charge surface desired charging voltage. determined captured image, distribution defects plane displayed.