作者: David W. Paananen , Paul C. Jensen
DOI:
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摘要: The present invention discloses a method for manufacturing high dielectric antenna structure. In one embodiment, or more film layers are applied to base layer by silk-screening yield structure having constant greater than that of the layer. After firing, patch element predetermined configuration is disposed on top surface conductive paste thereupon and firing. A ground plane bottom pre-drilled may be employed with registered holes defined in various silk-screened provide access an RF feed means, alternatively, hole can bored through permit interconnection between means element. For multiple-frequency applications, additional stacked structures elements manufactured according disclosed method, uppermost being interconnected means.