作者: Shu Yu , Akihiko Ito , Rong Tu , Takashi Goto
DOI: 10.1016/J.SURFCOAT.2010.10.050
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摘要: Abstract SiC-SiO2 nanocomposite films were prepared by laser chemical vapor deposition (LCVD) using a CO2 laser; tetraethyl orthosilicate and acetylene used as precursors. An amorphous phase was formed at temperature below 1650 K, whereas SiC (3 C) crystalline co-deposited with SiO2 above 1650 K. Dome-like deposits observed when low total pressure high applied. At higher lower temperature, the film obtained, grains about 10 nm in diameter distributed SiO2. The highest rate 374 μm h− 1 1675 K 400 Pa.