作者: P. Satyarthi , S. Ghosh , B.R. Sekhar , Y. Wang , S. Zhou
DOI: 10.1016/J.JALLCOM.2016.06.082
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摘要: Abstract The search of transparent conducting and ferromagnetic properties in Zn1−xCoxO based diluted magnetic semiconductor is explored either by chemically alloying the different concentration (x) Co or n-type co-doping. present work aims to explore electrical conduction process at variable temperatures, order probe room low temperature ferromagnetism triggered Zn0.95Co0.05O films using inert xenon ion irradiation. origin paramagnetism tunable explained from degree concentric bound polarons (BMPs) stabilization inside range hopping spheres through implication strongly weakly carriers O/Zn related lattice defects tetrahedrally substituted Co2+ ions. paramagnetic behavior as deposited film arises smallest density isolated BMPs resulted mainly marginal localized carrier due its highly insulating nature. progressive enhancement post irradiated a function fluence results overlapping static trigger onset ferromagnetism. strength found be maximal particular optimized highest regime substantial Further reduction ions detrimental owing non-static percolation presence nature intermediate regime.