Homogeneous linewidth of the P31 bound exciton transition in silicon
作者： A. Yang , M. Steger , T. Sekiguchi , M. L. W. Thewalt , J. W. Ager
DOI: 10.1063/1.3238268
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摘要: The optical transitions of the shallow donor bound exciton associated with phosphorus in silicon are a subject renewed interest due to recent discovery that these can be used both read out and initialize electron nuclear spin highly enriched S28i. ultimate limit processes will determined by natural or homogeneous linewidth which we determine here using spectral hole burning. observed 10 neV is only four times set lifetime.
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