Quantum oscillations and quantum Hall effect in epitaxial graphene
作者： Johannes Jobst , Daniel Waldmann , Florian Speck , Roland Hirner , Duncan K. Maude
DOI: 10.1103/PHYSREVB.81.195434
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摘要: We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. have measured properties, in particular charge-carrier density, mobility, conductivity, and magnetoconductance large samples as well submicrometer-sized Hall bars which are entirely lying atomically flat substrate terraces. The results display high mobilities, independent sample size. temperature dependence conductance indicates rather strong coupling to SiC An analysis Shubnikov-de Haas effect yields Landau-level spectrum graphene. When gated close Dirac point, mobility increases substantially graphenelike quantum occurs.
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