p-n 多層型 Si-Ge 熱電素子の作製及び出力評価

作者: Masatoshi OTAKE , Kenji SATO , Osamu SUGIYAMA , Shoji KANEKO

DOI: 10.2109/JCERSJ.112.464

关键词:

摘要: A Si0.8Ge0.2 multilayered thermoelectric element with ten pairs of p-n layers was fabricated by simultaneous sintering and joining Si-Ge powders a sandwiched alumina cloth. Every joint the firmly connected without any cracks layer inserted here remained unchanged even after pulse-current process. The maximum output, Pmax, this determined in temperature range 473-1273 K, then increased proportion to second order difference between hot cold ends element. As result, Pmax 120 mW when 500 K.

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