HIGH-EFFICIENCY N-TYPE SILICON SOLAR CELLS WITH FRONT SIDE BORON EMITTER

摘要: High-efficiency n-type PERL solar cells with a front side boron emitter passivated by ALD Al2O3 are presented within this work. For the applied cell design two variations have been employed: i) different emitters (deep / shallow) and ii) dielectric layers for rear passivation (thermal grown SiO2 PECVD SiNx). Both, thermal as well SiNx provide an effective of surface recombination velocities 4 cm/s 7 respectively. If metalized point contacts (with BSF) together 1 O cm FZ base silicon taken into account results in saturation current densities 30 fA/cm2 37 respectively, limiting open-circuit voltage (all losses due to neglected) 717 mV 712 mV. The density low 11 fA/cm2. Together at allows ~700 featuring lowly doped such high (up 703.6 mV) could be reached also device level, resulting conversion efficiency 23.4%. Also concentration rear, i.e. first steps towards industrial structure, still 21.8% achieved. All shown perfectly stable under illumination sun.