Interface engineering for high performance graphene electronic devices

摘要: A decade after the discovery of graphene flakes, exfoliated from graphite, we have now secured large scale and high quality film growth technology via a chemical vapor deposition (CVD) method. With establishment mass production using CVD, practical applications to electronic devices gained an enormous amount attention. However, several issues arise interfaces systems, such as damage/unintentional doping by transfer process, substrate effects on graphene, poor dielectric formation due its inert features, which result in degradation both electrical performance reliability actual devices. The present paper provides comprehensive review recent approaches resolve these interface engineering for We deal with each that is encountered during fabrication steps devices, graphene/metal graphene/high-k dielectrics, including intermediate graphene/target substrate.