Ohmic Contacts for Compound Semiconductors

摘要: Although there has been strong demand for low -resistance, highly reliable Ohmic contacts compound semiconductors to realize high-frequency transistors, high-power devices, and light-emitting (LED) laser diodes (LD), development of the contact technologies made on a trial-and-error basis. The primary reason is lack fundamental data design ideal metal/semiconductor interfaces due complexity elements involved at interfacial reaction. In this article, we review recent systematic studies carried out materials n-GaAs then address critical issues apply methodology established in develop low-resistance p-ZnSe p-GaN, which are desperate blue-green LED LD.