Highly Stable Si Atomic Line Formation on the {beta} -SiC(100) Surface

摘要: We use scanning tunneling microscopy to evidence the controlled formation of straight, very long, and highly stable Si atomic lines self-organizing on {beta}{minus}SiC(100) surface. These channels, which are composed dimers, form at phase transition between 3{times}2 c(4{times}2) reconstructions by selective atom organization. The presence is found coincide systematically with a lateral mismatch Si-dimer rows. Their number spacing mediated annealing time temperature, resulting in unprecedented arrangements ranging from large superlattice single isolated line. {copyright} {ital 1997} American Physical Society}