Power Semiconductor Devices: For Variable Speed Drives
作者： Jerry Hudgins , Rik De Doncker
DOI: 10.1109/MIAS.2012.2191341
关键词:
摘要: Historically, power semiconductor devices have been divided into three broad categories: diodes, transistors, and thyristors. Although modern can be classified in this way, there is an increasing overlap device design function. Also semiconductors, such as silicon carbide (SiC), gallium nitride (GaN), other materials, well novel designs increased the suitability broadened applications of switches megawatt (MW) conversion circuits systems.
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