Effect of doping level on the gain constant and modulation bandwidth of InGaAsP semiconductor lasers
作者： CB Su , V Lanzisera , None
DOI: 10.1063/1.95127
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摘要: Using the threshold carrier density measurement technique, differential gain dg/dn at lasing was measured. It found that of 1.3‐μm InGaAsP lasers is a strong function active layer doping level P0. At 2.5×1018 cm−3, several times larger than 4×1017 cm−3. A factor 2 increase in modulation bandwidth demonstrated using dependency on
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