Chemical Pressure effect at the boundary of Mott insulator and itinerant electron limit of Spinel Vanadates

摘要: The chemical pressure effect on the structural, transport, magnetic and electronic properties (by measuring X-ray photoemission spectroscopy) of ZnV2O4 has been investigated by doping Mn Co Zinc site ZnV2O4. With V-V distance increases with it decreases. resistivity thermoelectric power data indicate that as decreases system moves towards Quantum Phase Transition. transport also conduction is due to small polaron hopping. shows non-monotonous behaviour charge gap activation energy. XPS study supports observation decrease separation On other hand when Ti doped V-site metal-metal at same time TN increases.