Process for depositing WSix layers on a high topography with a defined stoichiometry
作者： Annette Sänger , Georg Schulze-Icking , Bernhard Sell
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摘要: Tungsten silicide layers are formed on a substrate and semiconductor component has deep trench capacitors with filling of tungsten silicide. The deposited the at temperature less than 400° C. pressure 10 torr from vapor phase. phase hs tungsten-containing precursor substance silicon-containing substance. molar ratio compound to in is selected be greater 500.
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