Electrically pumped ultraviolet random lasing action from p-NiO/n-GaN heterojunction

摘要: Abstract Electrically pumped random lasing has been realized from a p-NiO/n-GaN heterojunction diode. The highly disorderd p-NiO layer, deposited on the commercially available n-GaN substrate by radio frequency magnetron sputtering, supplies multiple optical scattering to sustain coherent feedback. layer provides amplification scattered light propagating inside heterojunction. Under injection currents larger than 11 mA, prominent action was discovered with peaks of line width less 0.6 nm at round 361 nm. exhibits characteristics lasing. Furthermore, mechanism emission discussed in terms band diagrams detail.