作者: J.C. Tsang , Ph. Avouris
DOI: 10.1016/B978-0-44-453153-7.00030-4
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摘要: We discuss the environment for future complementary metal-oxide semiconductor (CMOS) technology, and pressure improvements in this technology. The physical properties of carbon nanotubes including their structure electrical are summarized. Since existing CMOS technology is based on field effect transistors (FETs), concept an FET, nanotube transistors, use integrated circuits described. Carbon FETs (CNTFETs) also generates electroluminescence from band-to-band transitions. CNTFETs can operate as detectors where absorption light produces a photoresponse. mention other potential applications interconnects, transparent contacts, etc. close by describing some that required before have real impact circuit