Stabilization of Silicon Surfaces by Thermally Grown Oxides*

摘要: A study has been carried out of the stability silicon surfaces when they are provided with a chemically bound solid-solid interface. Stable have obtained system silicon-silicon dioxide oxide is thermally grown. This latter studied in some detail. In this paper following phases our investigation presented: (i) aspects thermal oxidation process and properties oxide; (ii) electronic resulting interface; (iii) application to devices device characteristics.