Interband transition distributions in the optical spectra of InAs/GaAs self-assembled quantum dots

摘要: The interband optical spectra of InAs/GaAs self-assembled quantum dots (SAD) are investigated with a three-dimensional eight-band k⋅p technique involving strain and piezoelectric effect. We show that the separation between hole states contributes to significant fraction transition energy, thereby invalidating two-dimensional harmonic oscillator model for electronic structures SADs. Moreover, aside from threshold low energy peak which results strong ground state electron–hole transition, major photoluminescence peaks observed experimentally made number equal-strength transitions.