Charge filling factors in clean and disordered arrays of tunnel junctions

摘要: We simulate one-dimensional arrays of tunnel junctions using the kinetic Monte Carlo method to study charge filling behaviour in large charging energy limit. By applying a small fixed voltage bias and varying offset voltage, we investigate this clean disordered (both weak strong disorder effects). The dependent modulation current is highly sensitive background exhibits substantial variation depending on strength disorder. show that while fractional factors are likely be washed out experimental devices due disorder, larger may observable.