3-D perpendicular assembly of SWNTs for CMOS interconnects

摘要: Due to their superior electrical properties such as high current density and ballistic transport, carbon nanotubes (CNT) are considered a potential candidate for future very large scale integration (VLSI) interconnects. However, direct incorporation of CNTs into complimentary metal oxide semiconductor (CMOS) architecture by the conventional chemical vapor deposition (CVD) growth method is problematic because it requires temperatures that might damage insulators doped semiconductors in underlying CMOS circuits. In this paper, we present directed assembly assemble aligned pre-patterned vias perpendicular substrate. A dynamic electric field with static offset applied provide force needed directing SWNT assembly. It also shown adjusting parameters assembled can be significantly enhanced. This highly scalable conducted at room temperature pressure accomplished few minutes. I-V characterization was using Zyvex nanomanipulator scanning electron microscope (SEM) measured value resistance 270 kΩs.