Characterization and simulation of Avalanche PhotoDiodes for next-generation colliders
作者： A. Vilà , J. Trenado , A. Arbat , A. Comerma , D. Gascon
DOI: 10.1016/J.SNA.2011.05.011
关键词:
摘要: Abstract This work reports on a novel effort to use Avalanche PhotoDiodes (APDs) construct an active pixel detector for charged particles in collider experiments. A dual-beam Focused Ion Beam setup was used characterize the response of device. Results sensitivity guard structures separating pixels are compared detailed Monte Carlo simulation. These results suggest that, through control doping concentration, devices with much improved fill factor can be achieved. new technology is proposed that could elevate 100%.
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