Physics and applications of semiconductor microstructures

作者: M. Jaros

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摘要: Description of non-interacting electrons in periodic structures - free-electron model quantum states interacting with a weak potential nearly-free-electron band structure localized representation electron solids tight-binding basic observable properties semiconductor materials thermal excitations, lattice vibrations, optical absorption and emission, impurity levels, p-n junctions, diffusion Einstein's relation, motion electric field electronic transport parameters technologically important semiconductors physics interfaces wells, superlattices, wires dots microstructures Poole-Frenkel effect, Josephson tunnelling propagation electromagnetic waves dielectrics, origin non-linear effects wave mixing, bistability, self-focusing soliton fabrication characterization methods crystal growth, lithography, dry etching, direct writing, Langmuir-Blodgett-Roberts films, digital MBE surface spectroscopy, Hall determination heterojunction line-ups application devices planar silicon technology, MOSFET biopolar transistors, high-electron-mobility transistor (HEMT), hot-electron transistors optoelectronics lasers, photodetectors, fibres switches, photonics information technology. Appendices: 1 hydrogenic levels 2 particle one-dimensional rectangular well 3 solution the Schrodinger equation for (Kronig-Penney) potential.

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