Intrinsic SiC/SiO2 Interface States
作者： V. V. Afanasev , M. Bassler , G. Pensl , M. Schulz
DOI: 10.1002/1521-396X(199707)162:1<321::AID-PSSA321>3.0.CO;2-F
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摘要: The energy distribution of electron states at SiC/SiO 2 interfaces produced by oxidation various (3C, 4H, 6H) SiC polytypes is studied electrical analysis techniques and internal photoemission spectroscopy. A similar interface traps over the bandgap observed for different indicating a common nature interfacial defects. Carbon clusters near-interfacial defects in SiO are proposed to be responsible dominant portion traps, while contributions caused dopant-related dangling bonds surface not observed.
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