Growth and characterization of nanocrystalline CdSe thin films deposited by the successive ionic layer adsorption and reaction method
作者： R B Kale , S D Sartale , B K Chougule , C D Lokhande
DOI: 10.1088/0268-1242/19/8/006
关键词:
摘要: The successive ionic layer adsorption and reaction method was used to deposit CdSe thin films on glass substrates at room temperature (300 K). were characterized by x-ray diffraction, energy dispersive analysis, scanning electron microscopy, atomic force microscopy high-resolution transmission microscopy. Optical absorption electrical resistivity measured. grew with nanocrystalline cubic phase along some amorphous present in film, an optical band gap 'Eg' of 2.1 eV the order 106 ? cm.
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