Design review on capacitive coupling interconnect for 3DIC
作者： Myat Thu Linn Aung , Eric Lim , Takefumi Yoshikawa , Tony Tae-Hyoung. Kim
DOI: 10.1109/EDSSC.2015.7285096
关键词:
摘要: A capacitive coupling interconnect (CCI) is formed with top metals from two separate dies when they are stacked in face-to-face configuration. The CCI provides inherent advantages of 3D integrations such as high level communication parallelism and heterogeneity much larger scale compared to μ-bump technologies because the electrodes can be small 8 × μm2 approximately 25 pad dimension μ-bump. In this paper, various challenges modeling circuit design discussed. implementation issues alignment crosstalk among proximity CCIs also presented different solutions several reported designs. Some possible applications discussed its future trend examined based on data literature.
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