Gallium Nitride Ultraviolet Optical Modulators

作者: Andrew Edward Oberhofer

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摘要: In narrower band gap semiconductors researchers have exploited the ability to manipulate exciton resonance via Quantum Confined Stark Effect make a variety of different types optical modulators at infrared wavelengths. this thesis, large binding energy Gallium Nitride is used as basis for ultraviolet without need quantum confinement. A 5x5 array UV 360 nm was fabricated. The operated in transverse geometry and consisted GaN active layer surrounded by transparent AlGaN insulating electrical contact layers. The typical thickness 0.4 um so effects electric field on could be directly observed. hydrogenic model bulk assumed. applied opposed attractive coulomb potential between electron hole broadens resonance. This results more or less light through device depending spectral position. To understand magnitude within structure 1D Poisson Solver used. Spontaneous polarization piezoelectric due lattice strain layers were included found influence lower operating voltages. modulated devices contrast ratio about 20 percent obtained. thermally devices, low frequencies than 200 Hz shifts edge led ratios expected. temperature dependence followed Varshni relationship allowed shift quantified. At higher from 1kHz 120 kHz an modulation ~ 5 readily observed attributed electronic effects. limitation 100 equipment related it conjectured that bandwidth would extend into MHz.

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