Mechanical properties of AlxGa1−xN films with high Al composition grown on AlN/sapphire templates

作者: F. J. Xu , B. Shen , M. J. Wang , J. Xu , L. Lu

DOI: 10.1063/1.2735551

关键词:

摘要: Mechanical properties of AlxGa1−xN thin films with high Al composition (0.33⩽x⩽1) grown on AlN/sapphire templates have been investigated by means the nanoindentation technique. It is found that Young’s modulus E increases increasing composition. In addition, it also occurrence clear and sudden displacement discontinuity (“pop-in”) in plastic deformation (PD) process dependent films. The higher results less pop-in PD With composition, believed increase bond strength decrease lattice mismatch between result greater resistance to formation dislocations, which responsible for behavior

参考文章(15)
C. Deger, E. Born, H. Angerer, O. Ambacher, M. Stutzmann, J. Hornsteiner, E. Riha, G. Fischerauer, Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements Applied Physics Letters. ,vol. 72, pp. 2400- 2402 ,(1998) , 10.1063/1.121368
Kazuhiro Shimada, Takayuki Sota, Katsuo Suzuki, First-principles study on electronic and elastic properties of BN, AlN, and GaN Journal of Applied Physics. ,vol. 84, pp. 4951- 4958 ,(1998) , 10.1063/1.368739
R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, M. Razeghi, High quantum efficiency AlGaN solar-blind p-i-n photodiodes Applied Physics Letters. ,vol. 84, pp. 1248- 1250 ,(2004) , 10.1063/1.1650550
T. Y. Tsui, G. M. Pharr, Substrate effects on nanoindentation mechanical property measurement of soft films on hard substrates Journal of Materials Research. ,vol. 14, pp. 292- 301 ,(1999) , 10.1557/JMR.1999.0042
R. Nowak, M. Pessa, M. Suganuma, M. Leszczynski, I. Grzegory, S. Porowski, F. Yoshida, Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal Applied Physics Letters. ,vol. 75, pp. 2070- 2072 ,(1999) , 10.1063/1.124919
S. O. Kucheyev, J. E. Bradby, J. S. Williams, C. Jagadish, M. Toth, M. R. Phillips, M. V. Swain, Nanoindentation of epitaxial GaN films Applied Physics Letters. ,vol. 77, pp. 3373- 3375 ,(2000) , 10.1063/1.1328047
D. Lorenz, A. Zeckzer, U. Hilpert, P. Grau, H. Johansen, H. S. Leipner, Pop-in effect as homogeneous nucleation of dislocations during nanoindentation Physical Review B. ,vol. 67, pp. 172101- ,(2003) , 10.1103/PHYSREVB.67.172101
J. K. Sheu, M. L. Lee, W. C. Lai, Aluminum gallium nitride ultraviolet photodiodes with buried p-layer structure Applied Physics Letters. ,vol. 87, pp. 043501- ,(2005) , 10.1063/1.2001162
Trevor F. Page, Warren C. Oliver, Carl J. McHargue, The deformation behavior of ceramic crystals subjected to very low load (nano)indentations Journal of Materials Research. ,vol. 7, pp. 450- 473 ,(1992) , 10.1557/JMR.1992.0450