作者: Sundar Kunwar , Puran Pandey , Mao Sui , Quanzhen Zhang , Ming-Yu Li
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摘要: By the controlled fabrication of Pt nanostructures, various surface morphology dependent electronic, catalytic and optical properties can be exploited for a wide range applications. In this paper, evolution nanostructures on GaN (0 0 1) by solid-state dewetting thin films is investigated. Controlling annealing temperature, time film thickness allows us to fabricate distinct size, density configurations nanostructures. For 10 nm thickness, tiny voids hillocks up 550 °C, extensive void expansion nanostructure between 600 °C–750 °C finally assisted nanoholes penetration above 800 are demonstrated. Furthermore, comparatively elongated NHs resulted with 20 growth connected formed duration control. The transformation governed diffusion, Rayleigh instability, Volmer–Weber energy minimization mechanism whereas commenced decomposition GaN, Pt–Ga alloying nitrogen desorption at high temperature. addition, characteristic reflectance, photoluminescence (PL) Raman spectroscopy demonstrate spectral response.