Nanoscale morphology and optical property evolution of Pt nanostructures on GaN (0 0 0 1) by the systematic control of annealing temperature and duration with various Pt thickness

作者: Sundar Kunwar , Puran Pandey , Mao Sui , Quanzhen Zhang , Ming-Yu Li

DOI: 10.1088/2053-1591/AA72BE

关键词:

摘要: By the controlled fabrication of Pt nanostructures, various surface morphology dependent electronic, catalytic and optical properties can be exploited for a wide range applications. In this paper, evolution nanostructures on GaN (0 0 1) by solid-state dewetting thin films is investigated. Controlling annealing temperature, time film thickness allows us to fabricate distinct size, density configurations nanostructures. For 10 nm thickness, tiny voids hillocks up 550 °C, extensive void expansion nanostructure between 600 °C–750 °C finally assisted nanoholes penetration above 800 are demonstrated. Furthermore, comparatively elongated NHs resulted with 20 growth connected formed duration control. The transformation governed diffusion, Rayleigh instability, Volmer–Weber energy minimization mechanism whereas commenced decomposition GaN, Pt–Ga alloying nitrogen desorption at high temperature. addition, characteristic reflectance, photoluminescence (PL) Raman spectroscopy demonstrate spectral response.

参考文章(38)
Li Huang, Fang Liu, Jingxi Zhu, Ranga Kamaladasa, Edward A. Preble, Tanya Paskova, Keith Evans, Lisa Porter, Yoosuf N. Picard, Robert F. Davis, Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates Journal of Crystal Growth. ,vol. 347, pp. 88- 94 ,(2012) , 10.1016/J.JCRYSGRO.2012.03.002
Simon Mostafa, Farzad Behafarid, Jason R. Croy, Luis K. Ono, Long Li, Judith C. Yang, Anatoly I. Frenkel, Beatriz Roldan Cuenya, Shape-dependent catalytic properties of Pt nanoparticles. Journal of the American Chemical Society. ,vol. 132, pp. 15714- 15719 ,(2010) , 10.1021/JA106679Z
Hiroshi Harima, Properties of GaN and related compounds studied by means of Raman scattering Journal of Physics: Condensed Matter. ,vol. 14, ,(2002) , 10.1088/0953-8984/14/38/201
Bablu K Ghosh, Toru Tanikawa, Akihiro Hashimoto, Akio Yamamoto, Yoshifumi Ito, None, Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs Journal of Crystal Growth. ,vol. 249, pp. 422- 428 ,(2003) , 10.1016/S0022-0248(02)02223-6
C X Lian, X Y Li, J Liu, Optical anisotropy of wurtzite GaN on sapphire characterized by spectroscopic ellipsometry Semiconductor Science and Technology. ,vol. 19, pp. 417- 420 ,(2004) , 10.1088/0268-1242/19/3/022
R. C. Jeff, M. Yun, B. Ramalingam, B. Lee, V. Misra, G. Triplett, S. Gangopadhyay, Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory Applied Physics Letters. ,vol. 99, pp. 072104- ,(2011) , 10.1063/1.3625426
Kwang Jae Lee, Sang-Jo Kim, Jae-Joon Kim, Kyungwook Hwang, Sung-Tae Kim, Seong-Ju Park, Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers. Optics Express. ,vol. 22, ,(2014) , 10.1364/OE.22.0A1164
J. Petersen, S. G. Mayr, Dewetting of Ni and NiAg solid thin films and formation of nanowires on ripple patterned substrates Journal of Applied Physics. ,vol. 103, pp. 023520- ,(2008) , 10.1063/1.2832758
B Roldan Cuenya, M Alcántara Ortigoza, LK Ono, F Behafarid, S Mostafa, JR Croy, K Paredis, G Shafai, TS Rahman, L Li, Z Zhang, JC Yang, None, Thermodynamic properties of Pt nanoparticles: Size, shape, support, and adsorbate effects Physical Review B. ,vol. 84, pp. 245438- ,(2011) , 10.1103/PHYSREVB.84.245438
E. Jiran, C. V. Thompson, Capillary instabilities in thin films Journal of Electronic Materials. ,vol. 19, pp. 1153- 1160 ,(1990) , 10.1007/BF02673327