Large area, flat-panel a-Si:H arrays for x-ray imaging

摘要: The development of a large-area amorphous silicon array for x-ray imaging is described. comprises pixels made up transistors and photodiode sensors with pixel-to-pixel pitch 450 micrometers . With format 512 X 560 pixels, the has an area 23 by 25 cm2 making it largest self-scanning, solid-state, pixelated device ever reported. first diagnostic images from such large are demonstrated general review current state this technology given. properties arrays summarized future anticipated developments discussed.© (1993) COPYRIGHT SPIE--The International Society Optical Engineering. Downloading abstract permitted personal use only.