Enhanced segmented channel MOS transistor with high-permittivity dielectric isolation material

摘要: By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., “corrugated substrate”), the resolution limitations associated with conventional manufacturing processes can be overcome, and high-performance, low-power transistors reliably repeatably produced. Forming corrugated prior to actual device formation allows created using high precision techniques that are not ordinarily suitable for production. subsequently incorporate high-precision into their channel regions will typically exhibit much more precise less variable performance than similar formed optical lithography-based cannot provide same degree patterning accuracy. Additional enhancement such as pulse-shaped doping, “wrapped” gates, epitaxially grown conductive regions, mobility materials (e.g. silicon-germanium, germanium, gallium arsenide, etc.), high-permittivity ridge isolation material, narrowed base used in conjunction segmented further enhance performance.