Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp ii process
作者： Timothy W. Weidman , Abhijit Basu Mallick , Srinivas D. Nemani
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摘要: Methods of curing a silicon oxide layer on substrate are provided. The methods may include the processes providing semiconductor processing chamber and forming an overlying at least portion substrate, including carbon species as byproduct formation. also introducing acidic vapor into chamber, reacting with to remove from layer. removing chamber. Systems deposit described.
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