Sapphire component with residual compressive stress

作者: Kelvin Kwong

DOI:

关键词:

摘要: A method comprises shaping an aluminum oxide ceramic material into a component for electronic device. The has first and second major surfaces. selected region of one or both the surfaces is heated to annealing temperature. then cooled below temperature, so that residual compressive stress generated in region.

参考文章(50)
Allen Kirkpatrick, Daniel C. Harris, Linda F. Johnson, Effect of ion implantation on the strength of sapphire at 300–600°C Journal of Materials Science. ,vol. 36, pp. 2195- 2201 ,(2001) , 10.1023/A:1017596001471
Koji Yamamoto, Atsushi Imura, 淳史 井村, 健司 福原, Kenji Fukuhara, 山本 幸司, Method for processing fragile material substrate ,(2009)
Jae-hee Cho, Hae-Yong Lee, Jeong-Wook Lee, Hyun-Min Jung, Choon-Kon Kim, Chang-Ho Lee, Cheol-soo Sone, Hyun-Min Shin, Nitride semiconductor template for light emitting diode and preparation thereof ,(2004)
Hiroaki Kinoshita, Yuko Morita, Fabrication process for single-crystal optical devices ,(2010)
Sergio Tsuda, Sinue Gomez, Lisa Anne Moore, Ivan A Cornejo, Michael Henry Wasilewski, Gregory Scott Glaesemann, Methods for forming grooves and separating strengthened glass substrate sheets ,(2011)
Junyeon Kim, Jang-Min Han, Ju-Hyung Ahn, Jae-Won Park, Young-chool Kim, Method for manufacturing the color controlled sappire ,(2008)