Effects of grown-in defects on interdiffusion dynamics in InAs∕InP(001) quantum dots subjected to rapid thermal annealing
作者： C. Dion , P. Desjardins , N. Shtinkov , F. Schiettekatte , P. J. Poole
DOI: 10.1063/1.2905317
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摘要: This work investigates the interdiffusion dynamics in self-assembled InAs∕InP(001) quantum dots (QDs) subjected to rapid thermal annealing 600–775°C temperature range. We compare two QD samples capped with InP grown at either optimal or reduced induce grown-in defects. Atomic is assessed by using photoluminescence measurements conjunction tight-binding calculations. By assuming Fickian diffusion, lengths LI are determined as a function of conditions from comparison measured optical transition energies those calculated for InP∕InAs1−xPx∕InP wells graded interfaces. values then analyzed one-dimensional model that accounts both transport nonequilibrium concentrations P interstitials capping layer InAs active region and P–As substitution vicinity. It demonstrated each process characterized diffusion coefficient D(i)...
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