作者: M Inada , I Umezu , P O Vaccaro , S Yamada , A Sugimura
DOI: 10.1088/0268-1242/19/4/020
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摘要: We studied electrical transport properties of coupled InAs quantum dots (QDs) embedded in GaAs. A resonance peak the current–voltage characteristics was observed low temperature region. When magnetic field applied, a linear shift voltage observed. As result g-factor estimation, is attributed to current corresponding electron through QDs.