An X-band 500W Internally Matched High Power GaN Amplifier
作者： Liming Gu , Wenjie Feng , Zhu Liu , Shijun Tang , Tao Chen
DOI: 10.1109/IEEE-IWS.2019.8804032
关键词:
摘要: In this paper the design, implementation, and experimental results of an X-band 500W GaN-HEMT power amplifier (PA) are presented. The device consists four GaN dies 18-mm gate periphery together with input output 2-stage impedance transformer networks. exhibited saturated 500 W gain 9.0 dB over frequency range 8.2-8.8 GHz, operating at 50 V drain voltage under pulsed condition 50us pulse width 5% duty ratio. addition, highest reached 580 9.6 8.5 GHz. This is HEMT ever reported for X-band.
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