Resistance standard using quantization of the Hall resistance of GaAs‐AlxGa1−xAs heterostructures
作者： D. C. Tsui , A. C. Gossard
DOI: 10.1063/1.92408
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摘要: Quantization of the Hall resistance two‐dimensional electron gas in GaAs‐AlxGa1−xAs heterostructures is observed at 4.2 K and magnetic fields as low T. This demonstrates its practical use a primary standard.
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