Imaging of boron dopant in highly oriented diamond films by cathodoluminescence in a transmission electron microscope
作者： R. J. Graham , F. Shaapur , Y. Kato , B. R. Stoner
DOI: 10.1063/1.112350
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摘要: Boron‐doped, highly oriented, (100) textured diamond films have been examined by cathodoluminescence in a transmission electron microscope to assess the distribution of defects and boron dopant within films. Dislocation‐related luminescence, which is believed be unrelated boron, was found originate inhomogeneously films, from dislocations single grains at grain boundaries. Luminescence donor‐acceptor pairs involving imaged with submicron spatial resolution show that uniformly distributed individual grains, these The dislocation density undoped grown under similar conditions much lower than B‐doped suggesting introduction B not only results its incorporation as dopant, but also gives rise dislocations.
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