Growth and characterization of α-phase Ga2−x Sn x O3 thin films for solar-blind ultraviolet applications
作者： Xiaolong Zhao , Zhenping Wu , Daoyou Guo , Wei Cui , Peigang Li
DOI: 10.1088/0268-1242/31/6/065010
关键词:
摘要: Ga2−x Sn x O3 thin films on m-plane (300) sapphire substrates were deposited by laser molecular beam epitaxy technology. Corundum-structured α-phase with different content obtained at 850 °C in vacuum pressure of 5 × 10−5 Pa. The band-gap energy the films, determined from absorption spectrum, decreases linearly increasing content. A metal–semiconductor–metal structured solar-blind photodetector based was fabricated, and excellent ultraviolet characteristics demonstrated. ratio I 254/I dark up to 1.40 102 responsivity increased 9.55 10−2 W−1. results suggest that are promising candidates for use photodetectors.
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