Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry
作者： A.W. Ott , J.W. Klaus , J.M. Johnson , S.M. George
DOI: 10.1016/S0040-6090(96)08934-1
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摘要: … both half-reactions in the binary reaction sequence versus … -reaction was selfterminating and both half-reactions reached … measured reaction kinetics were consistent with the reaction …
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Timo Asikainen, Mikko Ritala, Markku Leskelä, Growth of In2 O 3 Thin Films by Atomic Layer Epitaxy Journal of The Electrochemical Society. ,vol. 141, pp. 3210- 3213 ,(1994) , 10.1149/1.2059303
Max Born, Emil Wolf, Principles of Optics ,(1959)
Makoto Ishida, Ichiro Katakabe, Tetsuro Nakamura, Norio Ohtake, Epitaxial Al2O3 films on Si by low‐pressure chemical vapor deposition Applied Physics Letters. ,vol. 52, pp. 1326- 1328 ,(1988) , 10.1063/1.99685
J. Randall Creighton, Keith R. Lykke, Vasgen A. Shamamian, Bruce D. Kay, Decomposition of trimethylgallium on the gallium‐rich GaAs (100) surface: Implications for atomic layer epitaxy Applied Physics Letters. ,vol. 57, pp. 279- 281 ,(1990) , 10.1063/1.103714
Michael L. Wise, A. Bruce. Emerson, Stephen W. Downey, Detection of Sputtered Neutrals by Ultrahigh-Intensity Postionization in the Near-Infrared Analytical Chemistry. ,vol. 67, pp. 4033- 4039 ,(1995) , 10.1021/AC00118A001
Irving E. Dayton, American Institute of Physics Handbook American Journal of Physics. ,vol. 32, pp. 389- 389 ,(1964) , 10.1119/1.1970399
Mikko Ritala, Markku Leskelä, Erja Nykänen, Pekka Soininen, Lauri Niinistö, Growth of titanium dioxide thin films by atomic layer epitaxy Thin Solid Films. ,vol. 225, pp. 288- 295 ,(1993) , 10.1016/0040-6090(93)90172-L
Sung Woo Choi, Chul Kim, Jae Gon Kim, John S Chun, None, Nucleation and growth of aluminium oxide on silicon in the CVD process Journal of Materials Science. ,vol. 22, pp. 1051- 1056 ,(1987) , 10.1007/BF01103550
J.S. Kim, H.A. Marzouk, P.J. Reucroft, J.D. Robertson, C.E. Hamrin, Effect of water vapor on the growth of aluminum oxide films by low pressure chemical vapor deposition Thin Solid Films. ,vol. 230, pp. 156- 159 ,(1993) , 10.1016/0040-6090(93)90509-N
A.C. Dillon, A.W. Ott, J.D. Way, S.M. George, Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequence Surface Science. ,vol. 322, pp. 230- 242 ,(1995) , 10.1016/0039-6028(95)90033-0