作者: Silvia Kronmueller , Aaron Partridge , Markus Lutz
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摘要: Abstract not available for EP1633673Abstract of corresponding document: US2004245586There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, technique fabricating or manufacturing having mechanical structures encapsulated in chamber prior final packaging contact area disposed at least partially outside chamber. The electrically isolated from nearby conducting regions by way dielectric isolation trench that around area. material encapsulates structures, when deposited, includes more following attributes: low tensile stress, good step coverage, maintains its integrity subjected subsequent processing, does significantly and/or adversely impact performance characteristics (if coated with during deposition), facilitates integration high-performance integrated circuits. embodiment, is, example, silicon (polycrystalline, amorphous porous, whether doped undoped), carbide, silicon-germanium, germanium, gallium-arsenide.