Magnetic tunnel junction device with longitudinal biasing
作者： Stuart Stephen Papworth Parkin , Robert Edward Fontana
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摘要: A magnetic tunnel junction device for use as a memory cell or field sensor has one fixed ferromagnetic layer and sensing formed on opposite sides of the insulating barrier layer, hard biasing that is electrically insulated from but yet magnetostatically coupled with layer. The in an electrical lead substrate made up stack layers. layers are antiferromagnetic exchange biased antfferromagnetic so its moment cannot rotate presence applied field, contact whose free to field. generally rectangularly shaped parallel side edges. material located near spaced edges longitudinally bias preferred direction. isolates sense current not shunted allowed flow perpendicularly through stack.
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