Current-regulated, voltage-regulated erase circuit for EEPROM memory

作者: Ting-Wah Wong , Raul-Adrian Cernea

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摘要: A control circuit for erasing EEPROM memory cells is disclosed, including a charge pump having two switched constant current sources driven by opposing clocks. Current produced the coupled to node from where it used erase cells. switch provided isolate device being erased floating its source.

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