Carbon nanotube Schottky diode: an atomic perspective.
作者： P Bai , E Li , K T Lam , O Kurniawan , W S Koh
DOI: 10.1088/0957-4484/19/11/115203
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摘要: The electron transport properties of semiconducting carbon nanotube (SCNT) Schottky diodes are investigated with atomic models using density functional theory and the non-equilibrium Green's function method. We model SCNT diode as a embedded in metal electrode, which resembles experimental set-up. Our study reveals that rectification behaviour is mainly due to asymmetric transmission distribution conduction valence bands can be improved by changing metal-SCNT contact geometries. threshold voltage depends on barrier height tuned altering diameter SCNT. Contrary traditional perception, region exhibits better conductivity than other parts diode.
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