High-rate sputtering of thick PZT thin films for MEMS
作者： Harald Jacobsen , Klaus Prume , Bernhard Wagner , Kai Ortner , Thomas Jung
DOI: 10.1007/S10832-010-9615-6
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摘要: Crack and void free polycrystalline Lead Zirconate Titanate (PZT) thin films in the range of 5 µm to 10 have been successfully deposited on silicon substrates using a novel high rate sputtering process. The sputtered PZT layers show dielectric constant er between 1,000 1,800 with moderate dissipation factor tan (δ) = 0,002 − 0,01 measured at f 1 kHz, distinct ferroelectric hysteresis loop remanent polarisation 17 µC/cm2 coercive field strength 5.4 kV/mm. piezoelectric coefficients d33,f 80 pm/V are by Double Beam Laser Interferometer (DBLI). Based this deposition process membrane actuator mainly consisting SOI layer film was prepared. deflection depending driving voltage white light interferometer compared results finite element analysis (FEA). With approach transverse coefficient about e31 −11.2 C/m2 calculated, whereas all other material parameters model were lent from PZT-5A.
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